Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust transporting layers compatible with the fabrication pro...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (23), p.6179-6186
Main Authors: Saranin, Danila S., Mazov, Vsevolod N., Luchnikov, Lev O., Lypenko, Dmitry A., Gostishev, Pavel A., Muratov, Dmitry S., Podgorny, Dmitry A., Migunov, Denis M., Didenko, Sergei I., Orlova, Marina N., Kuznetsov, Denis V., Tameev, Alexey R., Di Carlo, Aldo
Format: Article
Language:English
Subjects:
Auger spectroscopy
Ethylene
Nickel oxides
Perovskites
Photovoltaic cells
Precursors
Reproducibility
Solar cells
Transporting
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Summary:Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust transporting layers compatible with the fabrication processes of the solar cell. In this study, we introduce a new precursor, tris(ethylene diamine) nickel acetate, for low temperature (280–300 °C) deposition of NiO hole transporting layer. Full characterization of the deposited NiO film layer was performed through XRD, Raman and Auger spectroscopy. We found a direct correlation between device performance and NiO thickness with maximum efficiency exceeding 15% for the thin NiO (10 nm) layer.
ISSN:2050-7526
2050-7534
DOI:10.1039/C8TC01169A