Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses

Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization...

Full description

Saved in:
Bibliographic Details
Published in:Optical and quantum electronics 2018-06, Vol.50 (6), p.1-9, Article 264
Main Authors: Ašmontas, Steponas, Raguotis, Romas, Bumelienė, Skaidra
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Indium arsenides
Ionization
Lasers
Monte Carlo simulation
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Pulse duration
Relaxation time
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization threshold field is found to depend linearly on frequency for the fields oscillating at frequencies much higher than reciprocal momentum relaxation time. Good agreement between calculations and available experimental data has been obtained.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-018-1528-7