Size reduction of Ge-on-Si photodetectors via a photonic bandgap

This work shrinks down the size of Ge-on-Si photodetectors to reduce the dark current and maintain the optical responsivity by surrounding photonic crystals. Numerical simulation shows that the employment of photonic crystal in the Si slab effectively prohibits the radiation modes from those guided...

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Published in:Applied optics (2004) 2018-04, Vol.57 (12), p.2962
Main Authors: Zhou, Haifeng, Sun, Yiling
Format: Article
Language:English
Subjects:
Absorption
Computer simulation
Dark current
Energy gap
Germanium
Photometers
Photonic band gaps
Photonic crystals
Silicon
Size reduction
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container_title Applied optics (2004)
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creator Zhou, Haifeng
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description This work shrinks down the size of Ge-on-Si photodetectors to reduce the dark current and maintain the optical responsivity by surrounding photonic crystals. Numerical simulation shows that the employment of photonic crystal in the Si slab effectively prohibits the radiation modes from those guided outgoing waves and facilitates light cyclic absorption in the epitaxial Ge region. A photodetector with a 5 μm long Ge absorption region is demonstrated with a dark current of 150 nA (1 μA up to 70°C), a 3 dB bandwidth of 17 GHz, and a responsivity of 0.75 A/W.
doi_str_mv 10.1364/AO.57.002962
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subjects Absorption
Computer simulation
Dark current
Energy gap
Germanium
Photometers
Photonic band gaps
Photonic crystals
Silicon
Size reduction
title Size reduction of Ge-on-Si photodetectors via a photonic bandgap
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