Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition

• Published in: Journal of alloys and compounds 2018-05, Vol.744, p.381-385
• Main Authors: Wang, Tao, Ma, Hong-Ping, Yang, Jian-Guo, Zhu, Jing-Tao, Zhang, Hao, Feng, Jijun, Ding, Shi-Jin, Lu, Hong-Liang, Zhang, David Wei
• Format: Article
• Language: English
• Subjects: Atomic layer deposition (ALD); Atomic layer epitaxy; Atomic structure; Copper; Electric properties; Electrical properties; Electrical resistivity; Multilayers; Optical properties; Photoelectricity; Resistivity; Sandwich structures; Transmittance; Transparent conducting oxides (TCOs); X-ray diffraction; Zinc oxide; Zinc oxides; ZnO/Cu/ZnO
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2018.02.115

Transparent conducting oxides (TCOs) with ZnO/Cu/ZnO sandwich structure grown by atomic layer deposition (ALD) were investigated. The optical and electrical properties of the ZnO/Cu/ZnO multilayers with different Cu thickness were studied by optical spectrometry and four-point probe measurements, respectively. The structural properties were investigated using x-ray diffraction and high resolution tansmission electron microscopy. The experiment results indicated that the thickness of copper has a significant influence on the photoelectrical properties of films. A average transmittance of over 65% at visual wavelength and low resistivity of ∼3.05 × 10−4Ω·cm were obtained when the thickness of Cu was 14 nm. The obtained results inspire us that ALD method is one of candidates for preparing high quality TCO films with high transmittance and low resistivity. •ZnO/Cu/ZnO TCO films with different Cu thickness were firstly grown by ALD.•The optical and electrical properties of TCO films were characterized.•Effects of Cu thickness on photoelectrical properties of TCO films have been investigated.•A average transmittance of over 65% and low resistivity of ∼3×10−4 Ω·cm were obtained.