Semiconductor:polymer blend ratio dependent performance and stability in low voltage flexible organic field-effect transistors

• Published in: Synthetic metals 2018-02, Vol.236, p.54-60
• Main Authors: Raghuwanshi, Vivek, Bharti, Deepak, Mahato, Ajay Kumar, Varun, Ishan, Tiwari, Shree Prakash
• Format: Article
• Language: English
• Subjects: Bending; Field effect transistors; Flexible; Low voltage; Organic field-effect transistors (OFETs); Polymers; Semiconductor devices; Semiconductors; Stability; Threshold voltage; Tips; TIPS-pentacene; TIPS-pentacene:polymer blend ratio; Transistors
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/j.synthmet.2018.01.003

[Display omitted] •Flexible OFETs fabricated with TIPS-Pentacene:PS blend.•Critical role of the polymer content in the evolution of OSC-dielectric interface.•High electrical performance with higher polymer proportions.•Analysis of the effect of varying the blend ratio on the operational stability.•Preserved stability of polymer rich OFETs even after undergoing mechanical strain. The critical role of the mixing ratio of the semiconductor and polymer solutions on the performance and electro-mechanical stability of the flexible blend OFETs is investigated. An improvement in the OFET performance was observed with increasing fraction of polymer in the solution. The maximum field-effect mobility improved from 0.08 for neat TIPS-pentacene OFETs to 0.24, 0.25 and 0.57 cm2 V−1 s−1 for semiconductor:polymer blend OFETs with mixing ratio of 3:1, 1:1 and 1:3 respectively. Under stress conditions of VDS = VGS = −5 V for 1 h, the 1:3 blend devices outperformed other categories of devices with very small drain current decay of ∼2% and 11% and small threshold voltage shift of 0.05 V and 0.27 V before and after 1.27% (Rbend = 5 mm) tensile strain application respectively. These devices also exhibited superior reliability with least performance spread over 100 continuous transfer characteristics measurement cycles before and after application of strain.