Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb– p -Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be e ϕ δ = 0.75 eV and δ =–1.54 × 10 –11 eV/Pa, respect...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-08, Vol.52 (8), p.1027-1030
Main Authors: Zainabidinov, S., Tursunov, I. G., Khimmatkulov, O.
Format: Article
Language:English
Subjects:
Coefficient of variation
Current voltage characteristics
Diodes
Hydrostatic pressure
Low-Dimensional Systems
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
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creator Zainabidinov, S.
Tursunov, I. G.
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description The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb– p -Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be e ϕ δ = 0.75 eV and δ =–1.54 × 10 –11 eV/Pa, respectively.
doi_str_mv 10.1134/S1063782618080262
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subjects Coefficient of variation
Current voltage characteristics
Diodes
Hydrostatic pressure
Low-Dimensional Systems
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
title Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
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