Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt algorithm

• Published in: Optical and quantum electronics 2018-07, Vol.50 (7), p.1-21, Article 293
• Main Authors: Tarbi, Amal, Atmani, El Houssine, Sellam, Mohammed Amine, Lougdali, Meriem, El Kouari, Youssef, Migalska-Zalas, Anna
• Format: Article
• Language: English
• Subjects: Algorithms; Artificial neural networks; Characterization and Evaluation of Materials; Chemical composition; Computer Communication Networks; Diagnostic systems; Electrical Engineering; Empirical equations; Energy gap; Gallium indium arsenide phosphide; Lasers; Mathematical models; Neural networks; Optical Devices; Optics; Optoelectronic devices; Organic chemistry; Parameters; Photonics; Physical properties; Physics; Physics and Astronomy; Substrates
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-018-1558-1

The quaternaries I n 1 - x G a x A s y P 1 - y are the main promising elements for the fabrication of optoelectronic devices. The adjustment of their physical parameters is assumed by the change of the molar fraction x and y . These parameters can be affected by the variation of temperature and pressure. To make the theoretical diagnosis of these materials, it is fundamental to know the energy gap ‘ E g ’ and the lattice parameter ‘ a ’, over a wide range of chemical compositions 0 ≤ x ≤ 0.47 and 0 ≤ y ≤ 1 , at different temperatures and pressures. We show that by using the Artificial Neural Network method optimized by the Levenberg Maquardt algorithm ANN-LM, it is possible to obtain results very close to the experiment. The scatter plot and error calculation show that the ANN-LM model provides more accurate values of the lattice parameter than those calculated by Vegard’s law. On the other hand, the energy gap values E g ( x , y , T ) estimated, using the ANN-LM model, proved to be close to the experimental values that those calculated by the empirical equations. In addition, the ANN-LM method allowed us to estimate with great accuracy the values of the energy gap at different temperatures and pressures E g ( P , T ) . Our work provides crucial information on the physical properties of the quaternary without the use of approximations, and without taking into account the hypothesis of a perfect agreement between InGaAsP and InP substrate.