Loading…
Chemical vapor deposition in fabrication of robust and highly efficient perovskite solar cells based on single-walled carbon nanotubes counter electrodes
This study presents a strategy of fabricating a perovskite layer through chemical vapor deposition (CVD) method and applying it as an efficient absorber in PSCs based on SWCNT counter electrode. As the results, the CVD method produced smooth and void-free perovskite films, which reduced the moisture...
Saved in:
Published in: | Journal of alloys and compounds 2018-05, Vol.747, p.703-711 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | This study presents a strategy of fabricating a perovskite layer through chemical vapor deposition (CVD) method and applying it as an efficient absorber in PSCs based on SWCNT counter electrode. As the results, the CVD method produced smooth and void-free perovskite films, which reduced the moisture absorption at the grain boundaries then delayed the degradation of the organic/inorganic composition. Furthermore, the smooth surface of the dye layer enhances charge collection at the interface with counter electrodes. Thus, the efficiency of cell fabricated by CVD method was 7.9%, which is improved by 29.5% as compared with cells using the conventional spin-coating method. Furthermore, the cell fabricated by CVD method gave an excellent stability. Accordingly, the efficiency was lost only 17% after 500 h performances. This approach could pave the way to develop low-cost PSCs with long-term stability.
[Display omitted]
•Smooth surface with grain size upon 2 μm of MAPbI3 via CVD.•Degradation of MAPbI3 films by moisture absorption depends on surface morphology.•Single-wall carbon nanotube for hybrid hole-transporter and counter electrode.•A small linear efficiency loss of SWCNT-based devices under illumination of 500 h. |
---|---|
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2018.02.006 |