Characterization of Zn2SnO4 Thin Films Prepared by RF Magnetron Sputtering

Zn 2 SnO 4 (ZTO) is a stable semiconductor in ZnO–SnO 2 system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn 2 SnO 4 ceramic target in this paper. The effects of annealing temperatures a...

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Bibliographic Details
Published in:Russian journal of physical chemistry. B 2018-05, Vol.12 (3), p.503-509
Main Authors: Tang, Tian Yu, Ren, Sheng Qiang, Liu, Yuan, Zhang, Jing Quan, Liu, Cai, Wu, Li Li, Wang, Wen Wu, Li, Wei, Feng, Liang Huan
Format: Article
Language:English
Subjects:
Annealing
Atomic force microscopes
Atomic force microscopy
Atomic structure
Band gap
Carrier density
Chemical Physics of Nanomaterials
Chemistry
Chemistry and Materials Science
Energy gap
Hall effect
Magnetron sputtering
Morphology
Optoelectronic devices
Photovoltaic cells
Physical Chemistry
Surface roughness
Thin films
Tin dioxide
Zinc oxide
Zinc stannate
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Summary:Zn 2 SnO 4 (ZTO) is a stable semiconductor in ZnO–SnO 2 system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn 2 SnO 4 ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 10 17 cm –3 , and mobility ranges from 10 0 to 10 1 cm 2 v –1 s –1 .
ISSN:1990-7931
1990-7923
DOI:10.1134/S1990793118030181