Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs...

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Bibliographic Details
Published in:Journal of crystal growth 2018-05, Vol.490, p.19-24
Main Authors: Kakkerla, Ramesh Kumar, Anandan, Deepak, Hsiao, Chih-Jen, Yu, Hung Wei, Singh, Sankalp Kumar, Chang, Edward Yi
Format: Article
Language:English
Subjects:
A1. Interfaces
A3. Metal organic chemical vapor deposition
Adatoms
Arsenic
B1. Antimonides
B1. Nanomaterials
B2. Semiconducting III–V materials
B3. Heterojunction semiconductor devices
Chemical vapor deposition
Electronic devices
Gold
Indium
Interfaces
Metalorganic chemical vapor deposition
Morphology
Nanowires
Organic chemistry
Silicon
Silicon substrates
Temperature control
Temperature effects
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Summary:We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.03.007