CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability

We demonstrate low-operational-current W/Co\(_{20}\)Fe\(_{60}\)B\(_{20}\)/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the \(\beta\)-phase W (\(\theta_{SH}\) = -0.53), a very low threshold current density of 3.3 \(...

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Bibliographic Details
Published in:arXiv.org 2018-03
Main Authors: Zahedinejad, M, Mazraati, H, Fulara, H, Yue, J, Jiang, S, Awad, A A, Åkerman, J
Format: Article
Language:English
Subjects:
CMOS
Magnesium oxide
Magnetic anisotropy
Oscillators
Signal generation
Silicon substrates
Threshold currents
Online Access:Get full text
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Summary:We demonstrate low-operational-current W/Co\(_{20}\)Fe\(_{60}\)B\(_{20}\)/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the \(\beta\)-phase W (\(\theta_{SH}\) = -0.53), a very low threshold current density of 3.3 \(\times\) 10\(^{7}\) A/cm\(^2\) can be achieved. Together with their very wide frequency tunability (7-28 GHz), promoted by a moderate perpendicular magnetic anisotropy, this makes HiR-Si/W/CoFeB based SHNOs potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.
ISSN:2331-8422
DOI:10.48550/arxiv.1803.03032