High-Field Magnetoresistance of Organic Semiconductors

The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Landé g-factors that arise from the weak spin-orbit coupling in the...

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Bibliographic Details
Published in:arXiv.org 2018-04
Main Authors: Joshi, G, Teferi, M Y, Jamali, S, Groesbeck, M, J van Tol, McLaughlin, R, Vardeny, Z V, Lupton, J M, Malissa, H, Boehme, C
Format: Article
Language:English
Subjects:
Conducting polymers
Continuous radiation
Current carriers
Magnetic fields
Magnetic resonance
Magnetic semiconductors
Magnetoresistance
Magnetoresistivity
Organic semiconductors
Polystyrene resins
Semiconductors
Spin-orbit interactions
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Summary:The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Landé g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called {\Delta}g mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.
ISSN:2331-8422
DOI:10.48550/arxiv.1804.09297