Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 \mu m fabricated by in-situ electron-beam lithography

The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and f...

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Bibliographic Details
Published in:arXiv.org 2018-05
Main Authors: Srocka, Nicole, Musiał, Anna, Schneider, Philipp-Immanuel, Mrowiński, Paweł, Holewa, Paweł, Burger, Sven, Quandt, David, Strittmatter, André, Rodt, Sven, Reitzenstein, Stephan, Sęk, Grzegorz
Format: Article
Language:English
Subjects:
Data transmission
Electron beam lithography
Finite element method
Gallium arsenide
Indium gallium arsenides
Light sources
Mesas
Numerical aperture
Photonics
Quantum dots
Technology transfer
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Summary:The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10\({\pm}\)2) % has been experimentally obtained in the 1.3 \mu m wavelength range in agreement with finite-element method calculations.
ISSN:2331-8422
DOI:10.48550/arxiv.1805.00624