Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET

Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an SiC mosfet regulated by a gate driver are mod...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2018-10, Vol.33 (10), p.8754-8763
Main Authors: Zeng, Zheng, Li, Xiaoling
Format: Article
Language:English
Subjects:
Capacitance
Degrees of freedom
Electric potential
Gate driver
gate resistance
gate voltage
gate–source capacitance
Logic gates
MOSFET
Parameters
Power loss
Resistance
ringing and overshoot regulation
SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet
Silicon
Silicon carbide
Switching
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Summary:Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an SiC mosfet regulated by a gate driver are modeled in detail, and insight mechanisms for suppressing the ringing and overshoot by using gate driver are highlighted. Based on a clamped inductive double-pulse test, many control degrees of freedom, including gate resistance, gate-source capacitance, and gate voltage, are considered and verified by comprehensive experimental results. Although these parameters can regulate the ringing and overshoot, the switching speed of the SiC mosfet decreases and its power loss increases. To balance the tradeoff, a preferred gate driver for an SiC mosfet is recommended.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2017.2775665