Accurate Estimation of Diode Reverse-Recovery Characteristics From Datasheet Specifications

This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes. The state equations for each mode are der...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2018-10, Vol.33 (10), p.8220-8225
Main Authors: Kundu, Utsab, Sensarma, Parthasarathi
Format: Article
Language:English
Subjects:
Capacitance
Computer simulation
Conductance model
Data sheets
datasheet specifications
Diodes
Electric potential
Empirical analysis
Equations of state
Estimation
Integrated circuit modeling
Junctions
Mathematical analysis
Mathematical model
Mathematical models
MOSFETs
Numerical models
power diodes
Recovery time
Resistance
reverse-recovery characteristics
Specifications
Switches
Temperature effects
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Summary:This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes. The state equations for each mode are derived taking the circuit nonidealities, viz., device capacitance and parasitic inductances, into account. Analytical expressions for reverse-recovery charge, reverse-recovery time, and diode current are derived and numerically solved to estimate the diode conductance directly from manufacturer's data. An empirical model is proposed to characterize the effects of temperature variation on the diode conductance. Numerical simulation and experimental results are presented for antiparallel diodes of three MOSFETs having different current and voltage ratings and also for a discrete p-n diode at different junction temperatures. The maximum estimation error with the proposed approach is 5.1% for peak reverse-recovery current and less than 8% for reverse-recovery time, peak voltage, and energy loss.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2018.2811380