High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2018-06
Main Authors: Kuc, Agnieszka, Cusati, Teresa, Dib, Elias, Oliveira, Augusto F, tunelli, Alessandro, Iannaccone, Giuseppe, Heine, Thomas, Fiori, Gianluca
Format: Article
Language:English
Subjects:
Field effect transistors
Semiconductor devices
Transistors
Valence band
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.
ISSN:2331-8422
DOI:10.48550/arxiv.1806.10059