Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At l...

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Bibliographic Details
Published in:arXiv.org 2017-03
Main Authors: Chua, Cassandra, Lartsev, Arseniy, Jinggao Sui, Panchal, Vishal, Puddy, Reuben, Richardson, Carly, Smith, Charles G, T J B M Janssen, Tzalenchuk, Alexander, Yakimova, Rositsa, Kubatkin, Sergey, Connolly, Malcolm R
Format: Article
Language:English
Subjects:
Bilayers
Carrier density
Charge transport
Doping
Electron transport
Epitaxial growth
Graphene
Interlayers
Magnetic fields
Resistance
Single electrons
Variation
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Summary:We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below \(T^*\), which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder.
ISSN:2331-8422