Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis

Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulat...

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Bibliographic Details
Published in:arXiv.org 2016-12
Main Authors: Morelhão, Sérgio L, nari, Celso I, Rappl, Paulo H O, Abramof, Eduardo
Format: Article
Language:English
Subjects:
Atomic force microscopy
Bismuth tellurides
Computer simulation
Domains
Genetic algorithms
Intermetallic compounds
Morphology
Stacking faults
Surface properties
Thickness
X ray analysis
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Summary:Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxic films with thickness ranging from 8 to 168 nm. It includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination and morphology. These results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from zero noise area detector to construct three-dimensional reciprocal space maps, insights into the nanostructure of domains and stacking faults in Bi2Te3 films are given.
ISSN:2331-8422