Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependen...

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Bibliographic Details
Published in:arXiv.org 2016-07
Main Authors: Feix, Felix, Flissikowski, Timur, Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T, Brandt, Oliver
Format: Article
Language:English
Subjects:
Continuous radiation
Electron recombination
High temperature
Localization
Photoluminescence
Quantum wells
Sheets
Temperature dependence
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Summary:We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.
ISSN:2331-8422
DOI:10.48550/arxiv.1605.00865