An instrument for advanced in situ x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sam...

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Bibliographic Details
Published in:arXiv.org 2017-05
Main Authors: Ju, Guangxu, Highland, Matthew J, Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A, Zhou, Hua, Brennan, Sean M, Stephenson, G Brian, Fuoss, Paul H
Format: Article
Language:English
Subjects:
Angular position
Coherence
Epitaxial growth
Metalorganic chemical vapor deposition
Microbeams
Motion stability
Nitrides
Photon correlation spectroscopy
Reproducibility
Vapor phase epitaxy
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Summary:We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.
ISSN:2331-8422
DOI:10.48550/arxiv.1702.03003