Transparent perovskite barium stannate with high electron mobility and thermal stability

Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2017-07
Main Authors: Lee, Woong-Jhae, Kim, Hyung Joon, Kang, Jeonghun, Jang, Dong Hyun, Kim, Tai Hoon, Lee, Jeong Hyuk, Kim, Kee Hoon
Format: Article
Language:English
Subjects:
Barium stannate
Control stability
Controllability
Electron mobility
Electronic devices
Electrons
Energy technology
Field effect transistors
Optoelectronic devices
Perovskites
Physical properties
Quantum phenomena
Semiconductor devices
Structural stability
Thermal stability
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.
ISSN:2331-8422
DOI:10.48550/arxiv.1707.09778