Atomic Layer deposition of 2D and 3D standards for quantitative synchrotron-based composition and structural analysis methods

The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission X-Ray Microscopy (STXM) is common. These standards however can s...

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Bibliographic Details
Published in:arXiv.org 2017-05
Main Authors: Becker, Nicholas G, Butterworth, Anna, Sokolov, Andrey, Salome, Muriel, Sutton, Steven, De Andrade Vincent, Westphal, Andrew, Proslier, Thomas
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Backscattering
Chemical composition
Inhomogeneity
Microbalances
Organic chemistry
Quantitative analysis
Quartz crystals
Reference materials
Reproducibility
Standard reference materials
Structural analysis
Substrates
Technology assessment
X ray microscopy
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Summary:The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission X-Ray Microscopy (STXM) is common. These standards however can suffer from inhomogeneity in chemical composition and thickness and often require further calculations, based on sample mounting and detector geometry, to obtain quantitative results. These inhomogeneities negatively impact the reproducibility of the measurements and the quantitative measure itself. Atomic Layer Deposition (ALD) is an inexpensive, scalable deposition technique known for producing uniform, conformal films of a wide range of compounds on nearly any substrate material. These traits make it an ideal deposition method for producing films to replace the NIST standards and create SRM on a wide range of relevant 2D and 3D substrates. Utilizing Rutherford Backscattering, X-ray Reflectivity, Quartz crystal microbalance, STXM, and SR-XRF we show that ALD is capable of producing films that are homogenous over scales ranging from 100's of microns to nms
ISSN:2331-8422