Electronic correlation effects and Coulomb gap in the Si(111)-\((\sqrt{3}\times\sqrt{3})\)-Sn surface

Electronic transport properties of the Si(111)-\((\sqrt{3}\times\sqrt{3})\)-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state corresponds to Mott-Hubbard insulator with a band gap \(2\D...

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Bibliographic Details
Published in:arXiv.org 2016-12
Main Authors: Odobescu, A B, Maizlakh, A A, Fedotov, N I, Zaitsev-Zotov, S V
Format: Article
Language:English
Subjects:
Electron transport
Energy gap
Hopping conduction
Silicon substrates
Spectroscopic analysis
Spectrum analysis
Temperature dependence
Transport properties
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Summary:Electronic transport properties of the Si(111)-\((\sqrt{3}\times\sqrt{3})\)-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state corresponds to Mott-Hubbard insulator with a band gap \(2\Delta = 70\)meV, which vanishes quickly upon temperature increase. The temperature dependence of the surface conductivity above \(T > 50\)K corresponds to the Efros-Shklovskii hopping conduction law. The energy gap at the Fermi level observed in tunnelling spectroscopy measurements at higher temperatures could be described in terms of dynamic Coulomb blockade approximation. The obtained localization length of electron is \(\xi = 7\)\AA.
ISSN:2331-8422
DOI:10.48550/arxiv.1612.04989