Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy

We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For fixed Py thickness we observed an...

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Bibliographic Details
Published in:arXiv.org 2017-04
Main Authors: Ohshima, Ryo, Klingler, Stefan, Dushenko, Sergey, Ando, Yuichiro, Weiler, Mathias, Huebl, Hans, Teruya Shinjo, Goennenwein, Sebastian T B, Shiraishi, Masashi
Format: Article
Language:English
Subjects:
Broadband
Damping
Doping
Electrical resistivity
Ferromagnetic resonance
Ferromagnetism
Interlayers
Iron compounds
Nickel compounds
Parameters
Silicon
Spectrum analysis
Thickness
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Summary:We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For fixed Py thickness we observed an increase of the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase of the Gilbert damping parameter was found Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pumping.
ISSN:2331-8422
DOI:10.48550/arxiv.1704.07006