Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, refl...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2017-06
Main Authors: Cheng, Man-Kit, Liang, Jing, Ying-Hoi Lai, Liang-Xi, Pang, Liu, Yi, Shen, Junying, Hou, Jianqiang, Qing Lin He, Xu, Bochao, Chen, Junshu, Wang, Gan, Liu, Chang, Lortz, Rolf, Sou, Iam-Keong
Format: Article
Language:English
Subjects:
Atomic beam spectroscopy
Atomic force microscopy
Crystal structure
Crystallinity
Electron diffraction
Energy dispersive X ray spectroscopy
Energy transmission
Epitaxial growth
High energy electrons
Layered materials
Microscopes
Microscopy
Molybdenum compounds
Photoelectric emission
Photoluminescence
Raman spectroscopy
Single crystals
Spectrum analysis
Thin films
Transmission electron microscopy
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.
ISSN:2331-8422