Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

Effect of geometrical and structural parameters on the efficiency of the tandem solar cell based on the III-V nanowire array on silicon is studied by the means of coupled opto-electrical simulations. A close to realistic structure, consisting of AlGaAs core-shell nanowire array, connected through a...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2017-08
Main Authors: Maryasin, Vladimir, Bucci, Davide, Rafhay, Quentin, Panicco, Federico, Michallon, Jérôme, Kaminski-Cachopo, Anne
Format: Article
Language:English
Subjects:
Arrays
Carrier lifetime
Circuits
Computer simulation
Depletion
Electric contacts
Nanowires
Optimization
P-n junctions
Parameters
Photovoltaic cells
Short circuit currents
Silicon
Solar cells
Tunnel diodes
Tunnel junctions
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Effect of geometrical and structural parameters on the efficiency of the tandem solar cell based on the III-V nanowire array on silicon is studied by the means of coupled opto-electrical simulations. A close to realistic structure, consisting of AlGaAs core-shell nanowire array, connected through a tunnel diode to a Si subcell is modelled, revealing the impact of top contact layer, growth mask and tunnel junction. Optical simulation of the tandem structure under current matching condition determine optimal geometrical parameters of the nanowire array. They are then used in the extensive electrical optimization of the radial junction in the nanowire subcell. Device simulations show the necessity of high doping of the junction in order to avoid full shell depletion. The influence of bulk and surface recombination on the performance of the top subcell is studied, exposing the importance of the good surface passivation near the depleted region of the radial p - n junction. Finally, simulations of the fully optimized tandem structure show that a promising efficiency of 27.6% with the short-circuit current density of 17.1 mA/cm^2 can be achieved with reasonable bulk and surface carrier lifetime.
ISSN:2331-8422
DOI:10.48550/arxiv.1708.00406