All-optical lithography process for contacting atomically-precise devices

We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment...

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Bibliographic Details
Published in:arXiv.org 2017-08
Main Authors: Ward, Daniel R, Marshall, Michael T, Campbell, DeAnna M, Lu, Tzu-Ming, Koepke, Justin C, Scrymgeour, David A, Bussmann, Ezra, Misra, Shashank
Format: Article
Language:English
Subjects:
Electric contacts
Lithography
Scanning tunneling microscopy
Viability
Online Access:Get full text
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Description
Summary:We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.
ISSN:2331-8422
DOI:10.48550/arxiv.1708.05411