Efficiency improvement of Si quantum dot solar cells by activation with boron implantation

• Published in: Solar energy 2018-04, Vol.164, p.89-93
• Main Authors: Kwak, Gyea Young, Kim, Tae Gun, Hong, Songwoung, Kim, Ansoon, Ha, Man Hyo, Kim, Kyung Joong
• Format: Article
• Language: English
• Subjects: Activation; Annealing; Boron; Energy conversion efficiency; Energy efficiency; Heterojunctions; Implantation; Ion implantation; Open circuit voltage; Photovoltaic cells; Quantum dots; Si quantum dot; Silicon dioxide; Solar cell; Solar cells; Solar energy
• ISSN: 0038-092X; 1471-1257
• DOI: 10.1016/j.solener.2018.02.029

•A Si QD heterojunction solar cell by the ion implantation process was successfully fabricated.•The activation effect of a B-doped Si QD layer created by a co-deposition process was compared with that by B implantation process.•The power conversion efficiency of a Si QD solar cell increased from 13.17% to 13.92% by fabrication with ion implantation. The activation of Si quantum dots (QDs) in general Si QD heterojunction solar cells fabricated by the co-deposition of Si and B is typically not effective, as a high concentration of B is required for effective activation. In order to address this issue, B atoms were injected by ion implantation after the formation of Si QDs in a SiO2 matrix. A Si QD solar cell was successfully realized when a Si QD layer was activated by the implantation of B ions followed by an annealing step. As a result, the power conversion efficiency of a Si QD solar cell realized by the ion implantation of B increased from 13.17% to 13.92%. The open-circuit voltage also increased from 523.03 mV to 529.64 mV in the Si QD solar cell created with the ion implantation of B.