Quantum electronic transport of topological surface states in beta-Ag2Se nanowire

Single-crystalline \beta-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bo...

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Bibliographic Details
Published in:arXiv.org 2016-01
Main Authors: Kim, Jihwan, Hwang, Ahreum, Lee, Sang-Hoon, Seung-Hoon Jhi, Lee, Sunghun, Yun Chang Park, Kim, Si-in, Hong-Seok, Kim, Yong-Joo Doh, Kim, Jinhee, Kim, Bongsoo
Format: Article
Language:English
Subjects:
Bonding strength
Chemical synthesis
Cones
Electron transport
First principles
Nanowires
Organic chemistry
Oscillations
Silver
Single crystals
Spin-orbit interactions
Spintronics
Topological insulators
Topology
Transport properties
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Summary:Single-crystalline \beta-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.
ISSN:2331-8422
DOI:10.48550/arxiv.1601.01551