Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concent...

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Bibliographic Details
Published in:arXiv.org 2016-02
Main Authors: Kumar, Suhas, Graves, Catherine E, Strachan, John Paul, Emmanuelle Merced Grafals, Kilcoyne, Arthur L David, Tyliszczak, Tolek, Johanna Nelson Weker, Nishi, Yoshio, R Stanley Williams
Format: Article
Language:English
Subjects:
Memristors
Migration
Oxygen
Tantalum oxides
X ray absorption
Online Access:Get full text
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Summary:Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.
ISSN:2331-8422
DOI:10.48550/arxiv.1602.01204