Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed, there are already plenty of examples in spintronics, notabl...

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Bibliographic Details
Published in:arXiv.org 2015-06
Main Authors: Wahler, M, Homonnay, N, Richter, T, Müller, A, Fuhrmann, B, Schmidt, G
Format: Article
Language:English
Subjects:
CMOS
Curie temperature
Electromagnetism
Ferromagnetism
Hall effect
Heterostructures
Magnetism
Polarization (spin alignment)
Spintronics
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Summary:Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed, there are already plenty of examples in spintronics, notably in the area of spin pumping and inverse spin Hall effect (ISHE) \cite{Azevedo2011, Czeschka2011, Hahn2013, Obstbaum2014}. Although complex oxides have been used in these experiments as a source of spin currents, they have never been demonstrated to act as a spin sink that exhibits ISHE. Here we show that in a heterostructure consisting of La\(_{0.7}\)Sr\(_{0.3}\)MnO\(_{3}\) (LSMO) and SrRuO\(_{3}\) (SRO) the low temperature ferromagnet SRO can act as a spin sink and exhibit a sizeable ISHE which persists even below its Curie temperature. This result opens up new possibilities for application of all oxide heterostructures in spintronics and may significantly extend the research on spin Hall effect and related phenomena.
ISSN:2331-8422