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Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing
Residual thermal stresses in SiC/Ti3SiC2/SiC joining couples were calculated by Raman spectra and simulated by finite element analysis, and then relaxed successfully by postannealing. The results showed that the thermal residual stress between Ti3SiC2 and SiC was about on the order of 1 GPa when coo...
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Published in: | International journal of applied ceramic technology 2018-09, Vol.15 (5), p.1157-1165 |
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container_title | International journal of applied ceramic technology |
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creator | Zhou, Xiaobing Li, Youbing Li, Yifan Liu, Zhen Yang, Hui Ding, Shurong Han, Young‐Hwan Lee, Jaehyung Du, Shiyu Huang, Qing |
description | Residual thermal stresses in SiC/Ti3SiC2/SiC joining couples were calculated by Raman spectra and simulated by finite element analysis, and then relaxed successfully by postannealing. The results showed that the thermal residual stress between Ti3SiC2 and SiC was about on the order of 1 GPa when cooling from 1300°C to 25°C. The thermal residual stresses can be relaxed by the recovery of structure disorders during postannealing. When the SiC/Ti3SiC2/SiC joints postannealed at 900°C, the bending strength reached 156.9 ± 13.5 MPa, which was almost twice of the as‐obtained SiC/Ti3SiC2/SiC joints. Furthermore, the failure occurred at the SiC matrix suggested that both the flexural strength of joining layer and interface were higher than the SiC matrix. |
doi_str_mv | 10.1111/ijac.12900 |
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The results showed that the thermal residual stress between Ti3SiC2 and SiC was about on the order of 1 GPa when cooling from 1300°C to 25°C. The thermal residual stresses can be relaxed by the recovery of structure disorders during postannealing. When the SiC/Ti3SiC2/SiC joints postannealed at 900°C, the bending strength reached 156.9 ± 13.5 MPa, which was almost twice of the as‐obtained SiC/Ti3SiC2/SiC joints. Furthermore, the failure occurred at the SiC matrix suggested that both the flexural strength of joining layer and interface were higher than the SiC matrix.</description><identifier>ISSN: 1546-542X</identifier><identifier>EISSN: 1744-7402</identifier><identifier>DOI: 10.1111/ijac.12900</identifier><language>eng</language><publisher>Malden: Wiley Subscription Services, Inc</publisher><subject>Bend strength ; finite element analysis ; Finite element method ; Joining ; Mathematical analysis ; Modulus of rupture in bending ; Raman spectra ; Repair & maintenance ; Residual stress ; SiC joining ; thermal mismatch stress ; Thermal stress</subject><ispartof>International journal of applied ceramic technology, 2018-09, Vol.15 (5), p.1157-1165</ispartof><rights>2018 The American Ceramic Society</rights><rights>Copyright © 2018 American Ceramic Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-7083-9416 ; 0000-0001-8258-3729</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhou, Xiaobing</creatorcontrib><creatorcontrib>Li, Youbing</creatorcontrib><creatorcontrib>Li, Yifan</creatorcontrib><creatorcontrib>Liu, Zhen</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Ding, Shurong</creatorcontrib><creatorcontrib>Han, Young‐Hwan</creatorcontrib><creatorcontrib>Lee, Jaehyung</creatorcontrib><creatorcontrib>Du, Shiyu</creatorcontrib><creatorcontrib>Huang, Qing</creatorcontrib><title>Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing</title><title>International journal of applied ceramic technology</title><description>Residual thermal stresses in SiC/Ti3SiC2/SiC joining couples were calculated by Raman spectra and simulated by finite element analysis, and then relaxed successfully by postannealing. The results showed that the thermal residual stress between Ti3SiC2 and SiC was about on the order of 1 GPa when cooling from 1300°C to 25°C. The thermal residual stresses can be relaxed by the recovery of structure disorders during postannealing. When the SiC/Ti3SiC2/SiC joints postannealed at 900°C, the bending strength reached 156.9 ± 13.5 MPa, which was almost twice of the as‐obtained SiC/Ti3SiC2/SiC joints. Furthermore, the failure occurred at the SiC matrix suggested that both the flexural strength of joining layer and interface were higher than the SiC matrix.</description><subject>Bend strength</subject><subject>finite element analysis</subject><subject>Finite element method</subject><subject>Joining</subject><subject>Mathematical analysis</subject><subject>Modulus of rupture in bending</subject><subject>Raman spectra</subject><subject>Repair & maintenance</subject><subject>Residual stress</subject><subject>SiC joining</subject><subject>thermal mismatch stress</subject><subject>Thermal stress</subject><issn>1546-542X</issn><issn>1744-7402</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAUhoMoOKc3_oKA193y3exyFHWTgaATxJuQNqmmZGltWnT_3mzzXJznuXg5B14AbjGa4TRz1-hqhskCoTMwwTljWc4QOU_Omcg4I--X4CrGBiHKKBUT8PFiozOj9nD4sv0uMQ69jRG2NXx1xXzraAKZpwWb1oUhwkr7avR6cG2AOhjYW69_rYHlHnZtHHQIVnsXPq_BRa19tDf_nIK3h_ttsco2z4_rYrnJOkI4ynKCFmVtS6atZcxqXtHKGCrrkojaClFySUiOK5pUIywFL5kkMuc1loZgQ6fg7nS369vv0cZBNe3Yh_RSESQRY4JQnFL4lPpx3u5V17ud7vcKI3UoTh2KU8fi1PppWRyN_gHf7WK_</recordid><startdate>201809</startdate><enddate>201809</enddate><creator>Zhou, Xiaobing</creator><creator>Li, Youbing</creator><creator>Li, Yifan</creator><creator>Liu, Zhen</creator><creator>Yang, Hui</creator><creator>Ding, Shurong</creator><creator>Han, Young‐Hwan</creator><creator>Lee, Jaehyung</creator><creator>Du, Shiyu</creator><creator>Huang, Qing</creator><general>Wiley Subscription Services, Inc</general><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-7083-9416</orcidid><orcidid>https://orcid.org/0000-0001-8258-3729</orcidid></search><sort><creationdate>201809</creationdate><title>Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing</title><author>Zhou, Xiaobing ; Li, Youbing ; Li, Yifan ; Liu, Zhen ; Yang, Hui ; Ding, Shurong ; Han, Young‐Hwan ; Lee, Jaehyung ; Du, Shiyu ; Huang, Qing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2250-7209bfeb4aee44ea5c3cdd38fb26fe66b582271c366ba01865b482875f18d21d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Bend strength</topic><topic>finite element analysis</topic><topic>Finite element method</topic><topic>Joining</topic><topic>Mathematical analysis</topic><topic>Modulus of rupture in bending</topic><topic>Raman spectra</topic><topic>Repair & maintenance</topic><topic>Residual stress</topic><topic>SiC joining</topic><topic>thermal mismatch stress</topic><topic>Thermal stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Xiaobing</creatorcontrib><creatorcontrib>Li, Youbing</creatorcontrib><creatorcontrib>Li, Yifan</creatorcontrib><creatorcontrib>Liu, Zhen</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Ding, Shurong</creatorcontrib><creatorcontrib>Han, Young‐Hwan</creatorcontrib><creatorcontrib>Lee, Jaehyung</creatorcontrib><creatorcontrib>Du, Shiyu</creatorcontrib><creatorcontrib>Huang, Qing</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>International journal of applied ceramic technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Xiaobing</au><au>Li, Youbing</au><au>Li, Yifan</au><au>Liu, Zhen</au><au>Yang, Hui</au><au>Ding, Shurong</au><au>Han, Young‐Hwan</au><au>Lee, Jaehyung</au><au>Du, Shiyu</au><au>Huang, Qing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing</atitle><jtitle>International journal of applied ceramic technology</jtitle><date>2018-09</date><risdate>2018</risdate><volume>15</volume><issue>5</issue><spage>1157</spage><epage>1165</epage><pages>1157-1165</pages><issn>1546-542X</issn><eissn>1744-7402</eissn><abstract>Residual thermal stresses in SiC/Ti3SiC2/SiC joining couples were calculated by Raman spectra and simulated by finite element analysis, and then relaxed successfully by postannealing. The results showed that the thermal residual stress between Ti3SiC2 and SiC was about on the order of 1 GPa when cooling from 1300°C to 25°C. The thermal residual stresses can be relaxed by the recovery of structure disorders during postannealing. When the SiC/Ti3SiC2/SiC joints postannealed at 900°C, the bending strength reached 156.9 ± 13.5 MPa, which was almost twice of the as‐obtained SiC/Ti3SiC2/SiC joints. Furthermore, the failure occurred at the SiC matrix suggested that both the flexural strength of joining layer and interface were higher than the SiC matrix.</abstract><cop>Malden</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1111/ijac.12900</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-7083-9416</orcidid><orcidid>https://orcid.org/0000-0001-8258-3729</orcidid></addata></record> |
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subjects | Bend strength finite element analysis Finite element method Joining Mathematical analysis Modulus of rupture in bending Raman spectra Repair & maintenance Residual stress SiC joining thermal mismatch stress Thermal stress |
title | Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing |
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