Polarization anisotropy of the emission from type-II quantum dots

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolve...

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Bibliographic Details
Published in:arXiv.org 2016-12
Main Authors: Klenovsky, P, Hemzal, D, Steindl, P, Zikova, M, Krapek, V, Humlicek, J
Format: Article
Language:English
Subjects:
Anisotropy
Crystallography
Emission analysis
Information technology
Photoluminescence
Photonics
Polarization
Quantum dots
Vertical orientation
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Summary:We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wavefunction and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
ISSN:2331-8422
DOI:10.48550/arxiv.1612.03585