A Dressed Spin Qubit in Silicon

• Published in: arXiv.org 2016-03
• Main Authors: Laucht, Arne, Kalra, Rachpon, Simmons, Stephanie, Dehollain, Juan P, Muhonen, Juha T, Mohiyaddin, Fahd A, Freer, Solomon, Hudson, Fay E, Itoh, Kohei M, Jamieson, David N, McCallum, Jeffrey C, Dzurak, Andrew S, Morello, A
• Format: Article
• Language: English
• Subjects: Coherence; Electric fields; Electron spin; Polaritons; Quantum theory; Qubits (quantum computing); Silicon
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1603.04800

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of \(T_{2\rho}^*=2.4\) ms and \(T_{2\rho}^{\rm Hahn}=9\) ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.