Localized state and charge transfer in nitrogen-doped graphene

Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2012-04
Main Authors: Joucken, Frederic, Tison, Yann, Lagoute, Jerome, Dumont, Jacques, Cabosart, Damien, Zheng, Bing, Repain, Vincent, Chacon, Cyril, Girard, Yann, Botello-Mendez, Andres Rafael, Rousset, Sylvie, Sporken, Robert, Charlier, Jean-Christophe, Henrard, Luc
Format: Article
Language:English
Subjects:
Carbon
Charge density
Charge transfer
Conduction bands
Configurations
Density functional theory
Dependence
Doping
Energy levels
Epitaxial growth
Graphene
Image resolution
Nitrogen
Nitrogen atoms
Organic chemistry
Spectrum analysis
Substitutes
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. For the first time, local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole-doping.
ISSN:2331-8422
DOI:10.48550/arxiv.1204.3560