Conductance Quantization at zero magnetic field in InSb nanowires

Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one di...

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Bibliographic Details
Published in:arXiv.org 2016-03
Main Authors: Kammhuber, Jakob, Cassidy, Maja C, Zhang, Hao, Önder Gül, Pei, Fei, Michiel W A de Moor, Nijholt, Bas, Watanabe, Kenji, Taniguchi, Takashi, Car, Diana, Plissard, Sebastien R, Erik P A M Bakkers, Kouwenhoven, Leo P
Format: Article
Language:English
Subjects:
Backscattering
Electron transport
Indium antimonide
Intermetallic compounds
Magnetic fields
Measurement
Nanowires
Phase transitions
Resistance
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Summary:Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.
ISSN:2331-8422
DOI:10.48550/arxiv.1603.03751