Bottom-up assembly of metallic germanium

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated...

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Bibliographic Details
Published in:arXiv.org 2015-03
Main Authors: Scappucci, G, Klesse, W M, Yeoh, L A, Carter, D J, Warschkow, O, Marks, N A, Jaeger, D L, Capellini, G, Simmons, M Y, Hamilton, A R
Format: Article
Language:English
Subjects:
Assembly
Coalescing
Conductors
Density functional theory
Doping
Free electrons
Miniaturization
Silicon
Online Access:Get full text
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Summary:Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.
ISSN:2331-8422
DOI:10.48550/arxiv.1503.05994