InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties h...

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Bibliographic Details
Published in:arXiv.org 2008-12
Main Authors: Wolfgang-Michael Schulz, Rossbach, Robert, Reischle, Matthias, Beirne, Gareth J, Jetter, Michael, Michler, Peter
Format: Article
Language:English
Subjects:
Barrier layers
Conduction bands
Configurations
High temperature
Optical properties
Photoluminescence
Quantum dots
Quantum efficiency
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Summary:Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al0.50Ga0.50InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers.
ISSN:2331-8422
DOI:10.48550/arxiv.0812.0452