Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhib...

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Bibliographic Details
Published in:arXiv.org 2011-04
Main Authors: Tkachov, G, Thienel, C, Pinneker, V, Buettner, B, Bruene, C, Buhmann, H, Molenkamp, L W, Hankiewicz, E M
Format: Article
Language:English
Subjects:
Backscattering
Carrier density
Fermions
Heterostructures
Quantum wells
Variations
Online Access:Get full text
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Summary:The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.
ISSN:2331-8422
DOI:10.48550/arxiv.1101.5692