The electronic properties of doped single walled carbon nanotubes and carbon nanotube sensors

We present ab initio calculations on the band structure and density of states of single wall semiconducting carbon nanotubes with high degrees (up to 25%) of B, Si and N substitution. The doping process consists of two phases: different carbon nanotubes (CNTs) for a constant doping rate and differen...

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Bibliographic Details
Published in:arXiv.org 2015-01
Main Author: Tetik, E
Format: Article
Language:English
Subjects:
Carbon
Density of states
Dependence
Doping
Gas sensors
Mathematical analysis
Nanotubes
Sensors
Single wall carbon nanotubes
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Summary:We present ab initio calculations on the band structure and density of states of single wall semiconducting carbon nanotubes with high degrees (up to 25%) of B, Si and N substitution. The doping process consists of two phases: different carbon nanotubes (CNTs) for a constant doping rate and different doping rates for the zigzag (8, 0) carbon nanotube. We analyze the doping dependence of nanotubes on the doping rate and the nanotube type. Using these results, we select the zigzag (8, 0) carbon nanotube for toxic gas sensor calculation and obtain the total and partial densities of states for CNT (8, 0). We have demonstrated that the CNT (8, 0) can be used as toxic gas sensors for CO and NO molecules, and it can partially detect Cl\(_2\) toxic molecules but cannot detect H\(_2\)S. To overcome these restrictions, we created the B and N doped CNT (8, 0) and obtained the total and partial density of states for these structures. We also showed that B and N doped CNT (8, 0) can be used as toxic gas sensors for such molecules as CO, NO, Cl\(_2\) and H\(_2\)S.
ISSN:2331-8422
DOI:10.48550/arxiv.1501.02339