Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal a...

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Bibliographic Details
Published in:arXiv.org 2007-04
Main Authors: Matveev, O A, Terent'ev, A I
Format: Article
Language:English
Subjects:
Annealing
Cadmium
Cadmium tellurides
Chlorine
Cooling rate
Crystal defects
High temperature
Ingots
Lattice vacancies
Temperature dependence
Thermodynamic equilibrium
Vapor pressure
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Summary:The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.
ISSN:2331-8422
DOI:10.48550/arxiv.0704.2325