Role of defects on the electronic and magnetic properties of CrAs/InAs and CrAs/CdSe half-metallic interfaces

We present an extended study of single impurity atoms at the interface between the half-metallic ferromagnetic zinc-blende CrAs compound and the zinc-blende binary InAs and CdSe semiconductors in the form of very thin multilayers. Contrary to the case of impurities in the perfect bulk CrAs studied i...

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Bibliographic Details
Published in:arXiv.org 2009-12
Main Authors: Galanakis, I, Lekkas, I
Format: Article
Language:English
Subjects:
Cadmium selenides
Defects
Ferromagnetism
Free energy
Heat of formation
Impurities
Indium arsenides
Magnetic properties
Metallicity
Multilayers
Zinc compounds
Zincblende
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Summary:We present an extended study of single impurity atoms at the interface between the half-metallic ferromagnetic zinc-blende CrAs compound and the zinc-blende binary InAs and CdSe semiconductors in the form of very thin multilayers. Contrary to the case of impurities in the perfect bulk CrAs studied in [I. Galanakis and S.G. Pouliasis, J. Magn. Magn. Mat. 321 (2009) 1084] defects at the interfaces do not alter in general the half-metallic character of the perfect systems. The only exception are Void impurities at Cr or In(Cd) sites which lead, due to the lower-dimensionality of the interfaces with respect to the bulk CrAs, to a shift of the \(p\) bands of the nearest neighboring As(Se) atom to higher energies and thus to the loss of the half-metallicity. But Void impurities are Schottky-type and should exhibit high formation energies and thus we expect the interfaces in the case of thin multilayers to exhibit a robust half-metallic character.
ISSN:2331-8422
DOI:10.48550/arxiv.0912.1881