Domain wall conduction in multiaxial ferroelectrics

The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for p...

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Bibliographic Details
Published in:arXiv.org 2011-08
Main Authors: Eliseev, Eugene A, Morozovska, Anna N, Svechnikov, George S, Maksymovych, Peter, Kalinin, Sergei V
Format: Article
Language:English
Subjects:
Accumulation
Charge distribution
Conduction
Curvature
Depletion
Domain walls
Electrostriction
Ferroelectric materials
Ferroelectricity
Free electrons
Mathematical analysis
Nanoelectronics
Poisson equation
Resistance
Size effects
Thermal expansion
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Summary:The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the present analysis. Spatial distributions of the ionized donors, free electrons and holes were found self-consistently using the effective mass approximation for the respective densities of states. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and thicker cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radius less then 5-10 correlation length appeared conducting across entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.
ISSN:2331-8422
DOI:10.48550/arxiv.1108.5344