Structural Changes and Ferroelectric Properties of BiFeO3-PbTiO3 Thin Films Grown via a Chemical Multilayer Deposition Method

Thin films of (1-x)BiFeO3-xPbTiO3 (BF-xPT) with x ~ 0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700{\deg}C in nitrogen sho...

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Bibliographic Details
Published in:arXiv.org 2010-06
Main Authors: Gupta, Shashaank, Garg, Ashish, Agrawal, Dinesh Chandra, Bhattacharjee, Shuvrajyoti, Pandey, Dhananjai
Format: Article
Language:English
Subjects:
Deposition
Electrical measurement
Ferroelectric materials
Ferroelectricity
Hysteresis loops
Multilayers
Organic chemistry
Perovskites
Precursors
Silicon substrates
Thin films
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Summary:Thin films of (1-x)BiFeO3-xPbTiO3 (BF-xPT) with x ~ 0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700{\deg}C in nitrogen show pure perovskite phase formation. In contrast to the equilibrium tetragonal structure for the overall molar composition of BF:PT::40:60, we find monoclinic structured BF-xPT phase of MA type. Piezo-force microscopy confirmed ferroelectric switching in the films and revealed different normal and lateral domain distributions in the samples. Room temperature electrical measurements show good quality ferroelectric hysteresis loops with remanent polarization, Pr, of up to 18 {\mu}C/cm2 and leakage currents as low as 10-7 A/cm2.
ISSN:2331-8422
DOI:10.48550/arxiv.1006.4664