Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of...

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Bibliographic Details
Published in:arXiv.org 2010-08
Main Authors: D Vu, Jurca, H F, Maroun, F, Allongue, P, Tournerie, N, Rowe, A C H, Paget, D, Arscott, S, Peytavit, E
Format: Article
Language:English
Subjects:
Bias
Cobalt
Dependence
Gold
Helicity
Photoelectrons
Polarization (spin alignment)
Silicon
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Summary:The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%.
ISSN:2331-8422
DOI:10.48550/arxiv.1008.1403