Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of...

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Bibliographic Details
Published in:arXiv.org 2010-10
Main Authors: Kleemann, Hans, Gutierrez, Rafael, Lindner, Frank, Avdoshenko, Stanislav, Manrique, Pedro D, Lüssem, Björn, Cuniberti, Gianaurelio, Leo, Karl
Format: Article
Language:English
Subjects:
Avalanche diodes
Breakdown
Charge transport
Depletion
Electric potential
Molecular orbitals
Semiconductor materials
Temperature dependence
Thickness
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Summary:Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.
ISSN:2331-8422
DOI:10.48550/arxiv.1010.5743