Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent c...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2015-03
Main Authors: Tomer, D, Rajput, S, Hudy, L J, Li, C H, L Li
Format: Article
Language:English
Subjects:
Bias
Carrier transport
Current carriers
Electric fields
Electrical junctions
Electrical measurement
Emission analysis
Gas sensors
Graphene
Schottky diodes
Sensitivity enhancement
Silicon carbide
Temperature dependence
Thermionic emission
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields.
ISSN:2331-8422
DOI:10.48550/arxiv.1503.08738