Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent c...

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Published in:arXiv.org 2015-03
Main Authors: Tomer, D, Rajput, S, Hudy, L J, Li, C H, L Li
Format: Article
Language:English
Subjects:
Bias
Carrier transport
Current carriers
Electric fields
Electrical junctions
Electrical measurement
Emission analysis
Gas sensors
Graphene
Schottky diodes
Sensitivity enhancement
Silicon carbide
Temperature dependence
Thermionic emission
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Rajput, S
Hudy, L J
Li, C H
L Li
description Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields.
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subjects Bias
Carrier transport
Current carriers
Electric fields
Electrical junctions
Electrical measurement
Emission analysis
Gas sensors
Graphene
Schottky diodes
Sensitivity enhancement
Silicon carbide
Temperature dependence
Thermionic emission
title Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
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