Growth, structural evolution and electronic properties of ultrathin films of Sn on W(110)

•Growth of Sn films on W(110) performed at room temperature and at higher temperature (673 K).•(3x1), (1x3) and (1x4) type of LEED pattern is observed for different coverage due to the energetically available adsorption sites for Sn atoms on W(110) surface.•No alloy formation is confirmed by XPS dat...

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Bibliographic Details
Published in:Surface science 2018-08, Vol.674, p.79-86
Main Authors: Chakraborty, Suvankar, Menon, Krishnakumar S.R.
Format: Article
Language:English
Subjects:
Alloys
Electric properties
Electrons
Evolution
Low energy electron diffraction
Photoelectric emission
Photoemission spectroscopy
Spectrum analysis
Temperature effects
Thin films
X ray photoelectron spectroscopy
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Summary:•Growth of Sn films on W(110) performed at room temperature and at higher temperature (673 K).•(3x1), (1x3) and (1x4) type of LEED pattern is observed for different coverage due to the energetically available adsorption sites for Sn atoms on W(110) surface.•No alloy formation is confirmed by XPS data.•Wetting layer of Sn forms on tungsten surface.•Spin-orbit splitted band can be observed by ARPES in the bulk projected gap. [Display omitted] Growth and structure of Sn on W(110) from submonolayer to thick film (up to 8 monolayers) coverages at room temperature (RT) and as-well-as for higher temperatures (HT) (up to 673 K) have been studied using low energy electron diffraction (LEED), x-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) techniques. Surface structural evolution was studied where (3  ×  1), (1  ×  3) and (1  ×  4) LEED patterns were observed for RT whereas (3  ×  1) and (1  ×  4) LEED patterns were observed for growth at 673 K due to the energetically available adsorption sites for Sn atoms on W(110) surface. The absence of alloy formation between Sn and W was confirmed by the XPS data where surface core level shift of Sn 3d was observed whereas no shift was observed for W 4f levels. Detailed electronic structures were studied along Γ¯ - H¯ and Γ¯ - N¯ directions for Sn deposited on W(110) with the help of ARPES. ARPES data for RT and HT case is mostly similar. A pair of splitted bands was observed due to the deposition of Sn near the surface projected band gap.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2018.04.004