Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave

The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during...

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Bibliographic Details
Published in:Instruments and experimental techniques (New York) 2018-07, Vol.61 (4), p.496-500
Main Authors: Korotkov, S. V., Aristov, Yu. V., Voronkov, V. B., Korotkov, D. A.
Format: Article
Language:English
Subjects:
Dislocations
Electrical Engineering
Electronics and Radio Engineering
Ionization waves
Measurement Science and Instrumentation
Nanosecond pulses
Physical Chemistry
Physics
Physics and Astronomy
Silicon diodes
Surface layers
Switching
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Summary:The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during their manufacture.
ISSN:0020-4412
1608-3180
DOI:10.1134/S0020441218030211